| | Standard Course Syllabus | Course Supervisor | Date of Approval |
| | Dept. of Electrical and Computer Engineering | Valco | 2/05 |
| | 637 | Solid State Microelectronics Laboratory I |
| | 2. | CATALOG DESCRIPTION |
| | Introduction to laboratory techniques including oxidation, chemical processes, photolithography, diffusion, and |
| | metalization; fabrication and measurements of planar diodes and transistors. |
| | Quarters of Offering | Credits | | Level | Class Meeting |
| | Au Qtr. | 4 | U G | 2 cl, 1 4-hr lab. |
| | Course Prerequisites |
| | Prereq: 432. |
| | 3. | PREREQUISITES BY TOPIC |
| | Basic understanding of semiconductor crystal orientations; physical electronics of semiconductors; PN junction and diode; |
| | bipolar junction transistors; MOS capacitor; field effect transistors. |
| | Courses that require this as a direct prerequisite |
| | none |
| | 4. | Text(s) and Other Course Materials | Author(s) | Publisher |
| | The Science and Engineering of Microelectronic Fabrication, | Campbell, S.A. | Oxford University Press |
| | 3rd Ed. |
| | ISBN: 978-0195320176 |
| | References (supplemental reading) |
| | [1] S. Wolfe and R.N. Tauber, "Silicon Processing for the VLSI Era, Volume 1, Process Technology," Lattice Press 1986 (or |
| | 2nd edition 2000) |
| | [2] S. Wolfe, "Silicon Processing for the VLSI Era, Volume 2, Process Integration," Lattice Press 1990 |
| | [3] S. Wolfe, "Silicon Processing for the VLSI Era, Volume 3, The Submicron MOSFET," Lattice Press 1995 |
| | [4] D.K. Reinhard, "Introduction to Integrated Circuit Engineering," Houghton Mifflin Co. 1987 |
| | [5] S. K. Ghandhi, "VLSI Fabrication Principles," Wiley 1983 (or 2nd edition 1994) |
| | [6] R.C. Jaeger, "Introduction to Microelectronic Fabrication," Addison-Wesley 1988 |
| | [7] J.D. Plummer, M.D. Deal, P.B. Griffin, "Silicon VLSI Technology," Prentice-Hall 2000 |
| | 5. | COURSE OBJECTIVES |
| | 1. To introduce the student to the basic techniques for fabrication of integrated circuits. (Criteria 3(a),(c),(e),(k)) |
| | 2. The students apply the knowledge learned in their materials and physical electronics courses in laboratory while |
| | fabricating MOS transistors, a pn diode, a MOS capacitor, a diffused resistor, two inverters and two test structures. |
| | (Criteria 3(a),(b),(c),(e)) |
| | 3. The devices and test structures they fabricate are characterized and the students analyze and interpret the results. |
| | (Criteria 3(a),(b)) |
| | 4. They prepare a comprehensive report in the style of a journal paper to obtain practice in communicating the work they |
| | have performed and the results they obtained. (Criteria 3(a),(b),(g)) |
| | 5. The students have some exposure to issues involving the safe use, handling and disposal of hazardous chemicals. (Criteria |
| | 3(a),(f)) |
| | Thursday, August 14, 2008 09:18 AM |
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