| | Standard Course Syllabus | Course Supervisor | Date of Approval |
| | Dept. of Electrical and Computer Engineering | Ringel | 4/05 |
| | 735 | Compound Semiconductor Process Technology |
| | 2. | CATALOG DESCRIPTION |
| | III-V compound semiconductor device fabrication technology; epitaxy, doping, bandgap engineering; GaAs and InP high |
| | speed devices and IC design approaches; testing and failure mechanisms. |
| | Quarters of Offering | Credits | | Level | Class Meeting |
| | Wi Qtr (even years). | 3 | U G | 3 cl. |
| | Course Prerequisites |
| | Prereq: 432. |
| | 3. | PREREQUISITES BY TOPIC |
| | PN junction devices physics; semiconductor physics; diodes, bipolar devices, field effect devices |
| | Courses that require this as a direct prerequisite |
| | none |
| | 4. | Text(s) and Other Course Materials | Author(s) | Publisher |
| | GaAs High-Speed Devices: Physics, Technology and Circuit | C.Y. Chang, F. Kai | Wiley |
| | Applications |
| | ISBN: 0-471-85641-X |
| | References (supplemental reading) |
| | [1] C.Y. Change and F. Kai, GaAs High Speed Devices, 1994. |
| | [2] E.H.C. Parker, The Technology and Physics of Molecular Beam Epitaxy, 1985. |
| | [3] Cheng T. Wang, Ed., Introduction to Semiconductor Technology: GaAs and Related Compounds, John Wiley & Sons, |
| | 1990. |
| | [4] David K. Ferry, Ed., Gallium Arsenide Technology, Howard W. Sams & Co., 1985. |
| | [5] Avishay Katz, Ed., Indium Phosphide and Related materials: Processing, Technology and Devices, Artech House, 1992. |
| | 5. | COURSE OBJECTIVES |
| | 1. Students learn about processing chemistry of compound semiconductors. (Criterion 3(a)) |
| | 2. Students learn about how electronic and optical devices are built of compound semiconductors. (Criteria 3(c),(e)) |
| | 3. Students learn about methods and techniques used for fabricating compound semiconductor devices used in |
| | communications, optoelectronics, high speed wireless applications. (Criterion 3(k)) |
| | 6. | TOPICS AND (# OF LECTURES) |
| | Introduction to compound semiconductor devices (1) |
| | Material properties, alloys and heterostructures of III-V compound semiconductors (4) |
| | Bulk crystal growth techniques (2) |
| | Vacuum and ultra-high vacuum physics and technology (2) |
| | Epitaxial growth methods - molecular beam epitaxy and metalorganic chemical vapor deposition (5) |
| | Device patterning and lithography (4) |
| | Wet chemical processing (2) |
| | Dry chemical processing, etching and plasma processing (3) |
| | In-class case study of a device (4) |
| | 7. | CLASS MEETING PATTERN | (For example, "3cl." means 3 48-min classes per week.) |
| | 3 cl. |
| | Thursday, August 14, 2008 09:20 AM |
| | Page 1 of 2 |