| | Standard Course Syllabus | Course Supervisor | Date of Approval |
| | Dept. of Electrical and Computer Engineering | Brillson | 4/03 |
| | 736 | Electronic Surfaces and Interfaces |
| | 2. | CATALOG DESCRIPTION |
| | Physical principles governing electronic, chemical, and structural properties of semiconductor interfaces and the techniques |
| | available to characterize them. |
| | Quarters of Offering | Credits | | Level | Class Meeting |
| | Wi Qtr (odd years). | 3 | U G | 3 cl. |
| | Course Prerequisites |
| | Prereq: 331 or equivalent. This course is cross-listed with Physics (as special topics course). |
| | 3. | PREREQUISITES BY TOPIC |
| | Introductory quantum mechanics |
| | Courses that require this as a direct prerequisite |
| | none |
| | 4. | Text(s) and Other Course Materials | Author(s) | Publisher |
| | Surfaces and Interfaces of Solid Materials, 4th Ed. | Luth, H. | Springer |
| | ISSN: 1439-2674; ISBN: 3-540-42331-1 |
| | References (supplemental reading) |
| | [1] Selections from Contacts to Semiconductors, L.J.Brillson (Noyes, Park Ridge, 1993) and L.J.Brillson in Handbook on |
| | Semiconductors (North-Holland, Amsterdam, 1992), Volume 1, Chapter 7. |
| | 5. | COURSE OBJECTIVES |
| | Students should achieve proficiency in the areas of: |
| | 1. Microelectronic device design (Criteria 3(a),(c)) |
| | 2. Optoelectronic device design (Criteria 3(a),(c)) |
| | 3. Microelectronic device processing (Criteria 3(a),(k)) |
| | 4. Optoelectronic device processing (Criteria 3(a),(k)) |
| | 5. Microelectronic device characterization (Criteria 3(a),(k)) |
| | 6. Optoelectronic device characterization (Criteria 3(a),(k)) |
| | 7. Microelectronic materials characterization (Criteria 3(a),(k)) |
| | 8. Optoelectronic materials characterization (Criterion 3(a),(k)) |
| | 6. | TOPICS AND (# OF LECTURES) |
| | Fundamentals of semiconductor surfaces and interfaces (8) |
| | Ultrahigh vacuum surface science techniques (6) |
| | Reactions, diffusion, and defects (3) |
| | Schottky barrier formation (3) |
| | Practical contact formation to semiconductors (2) |
| | Surface Passivation and barrier control (2) |
| | Heterojunctions (3) |
| | Atomic Design of Optoelectronic devices (3) |
| | 7. | CLASS MEETING PATTERN | (For example, "3cl." means 3 48-min classes per week.) |
| | 3 cl. |
| | Wednesday, April 23, 2008 05:24 PM |
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