| | Standard Course Syllabus | Course Supervisor | Date of Approval |
| | Dept. of Electrical and Computer Engineering | Valco | January 20, 1999 |
| | 831 | Semiconductor Device Theory |
| | 2. | CATALOG DESCRIPTION |
| | Basic semiconductor device current equations, measurement and analysis of interface states, advanced p-n junction theory, |
| | avalanche breakdown, metal-semiconductor contacts, MIS capacitors, and short channel devices. |
| | Quarters of Offering | Credits | | Level | Class Meeting |
| | Wi Qtr (even years). | 3 | G | 3 cl. |
| | Course Prerequisites |
| | Prereq: 730 or equiv. |
| | 3. | PREREQUISITES BY TOPIC |
| | Semiconductor physical electronics; semiconductor devices; electronic transport in crystals; energy band structure of |
| | semiconductors; basic bulk generation/recombination theory |
| | Courses that require this as a direct prerequisite |
| | none |
| | 4. | Text(s) and Other Course Materials | Author(s) | Publisher |
| | Fundamentals of Modern VLSI Devices, 1998 | Taur and Ning | Cambridge University |
| | ISBN: 0-521-55959-6 |
| | References (supplemental reading) |
| | [1] Shyh Wang, Fundamentals of Semiconductor Theory and Device Physics, Prentice Hall, (1989). |
| | [2] Robert F. Pierret, Field Effect Devices, 2nd Edition, Addison-Wesley, (1990) [Volume IV of the Modular Series on solid |
| | State Devices] |
| | [3] Robert F. Pierret, Advanced Semiconductor Fundamentals, Addison-Wesley, (1987) [Volume VI of the Modular Series |
| | on Solid State Devices] |
| | [4] Dieter K. Schroder, Advanced MOS Devices, Addison-Wesley, (1987) |
| | [5] R.M. Warner and B.L. Grung, Semiconductor-Device Electronics, Holt, Rinehart and Winston, (1991). |
| | [6] Kevin M. Kramer and W. Nicholas G. Hitchon, Semiconductor Devices - A simulation Approach, Prentice Hall, (1997) |
| | [7] S.M. Sze, Physics of Semiconductor Devices, Wiley, 1981 |
| | [8] E.H. Nicollian and J.R. Brews, MOS Physics and Technology, Wiley, 1982. |
| | 5. | COURSE OBJECTIVES |
| | 1. The student will learn about pn junction diodes to a greater depth than is acquired in an undergraduate physical electronics |
| | course (e.g. EE432). This will include the effects of the semiconductor surface, breakdown, realistic doping profiles and |
| | edges and corners. (Criteria 3(a),(c),(e),(g),(i),(k)) |
| | 2. The student will learn about MOSFETs to a greater depth than is acquired in an undergraduate physical electronics course |
| | (e.g. EE432). This will include the more thorough long channel device models, effects of surfaces and interfaces, device |
| | scaling and short channel effects. (Criteria 3(a),(c),(e),(g),(i),(k)) |
| | 6. | TOPICS AND (# OF LECTURES) |
| | Ambipolar drift and diffusion (3) |
| | Surface states and surface recombination (3) |
| | Current transport in p-n junction diode including bulk and surface generation/recombination, breakdown, AC current and |
| | switching (6) |
| | Capacitance of junctions - basic, diffused, edge and corner effects (2) |
| | MOS capacitor - basic and more complete models (3) |
| | Long channel MOSFET - basic and more complete models (5) |
| | Sub-micron MOSFETs - threshold voltage, sub-threshold, scaling, hot carriers (7) |
| | 7. | CLASS MEETING PATTERN | (For example, "3cl." means 3 48-min classes per week.) |
| | 3 cl. |
| | Wednesday, April 23, 2008 05:28 PM |
| | Page 1 of 2 |