| | Standard Course Syllabus | Course Supervisor | Date of Approval |
| | Dept. of Electrical and Computer Engineering | Roblin | January 20, 1999 |
| | 832 | High-Speed Semiconductor Devices |
| | 2. | CATALOG DESCRIPTION |
| | Principles underlying the operation and application of high-speed solid-state active devices, electron transport in high fields, |
| | Gunn effect, superlattices, heterostructures, and modulation doped devices. |
| | Quarters of Offering | Credits | | Level | Class Meeting |
| | Sp Qtr (even years). | 3 | G | 3 cl. |
| | Course Prerequisites |
| | Prereq: 730 or equiv. |
| | 3. | PREREQUISITES BY TOPIC |
| | Energy bands, charge carriers and bandstructure. |
| | Courses that require this as a direct prerequisite |
| | none |
| | 4. | Text(s) and Other Course Materials | Author(s) | Publisher |
| | High Speed Heterostructure Devices | P. Roblin and H. Rohdin | Cambridge University |
| | References (supplemental reading) |
| | [1] Fundamentals of Semiconductor Theory and Device Physics Shyh Wang, Prentice Hall. |
| | 5. | COURSE OBJECTIVES |
| | 1. To provide the students which detailed understanding of the operation of classical and quantum heterostructure devices |
| | and their high-frequency response. |
| | 2. Review of the semi-classical theories of heterojunction devices and their application the PN heterojunction and the HBT. |
| | |
| | 3. Emphasis of the first half of the course is placed upon the quantum-transport and frequency response of heterojunction |
| | devices such as the resonant tunneling diode. |
| | 4. Emphasis of the second half of the course is placed upon the physical operation of HEMTs, including high-field transport |
| | two-dimensional effect and short-channel effects, and the development of high-frequency small- and large-signal electro- |
| | 6. | TOPICS AND (# OF LECTURES) |
| | Semi-Classical Theory of Heterostructures (3) |
| | Quantum Theory of Heterostructures (3) |
| | Quantum Heterostructure Devices (3) |
| | Scattering Processes in Heterostructures (3) |
| | 3D Scattering-Assisted Tunneling (3) |
| | High-Frequency Response of Quantum Devices (3) |
| | Charge Control of the Two-Dimensional Electron Gas (3) |
| | High Electric Field Transport (3) |
| | Current Voltage Model of the MODFET (3) |
| | Small and Large-Signal AC Models for the MODFET (3) |
| | 7. | CLASS MEETING PATTERN | (For example, "3cl." means 3 48-min classes per week.) |
| | 3 cl. |
| | Thursday, August 14, 2008 09:23 AM |
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