Defect Spectroscopy Laboratory
This unique, specialized laboratory is dedicated to the characterization and analysis of electrically active deep level defects in semiconductors and insulators. The lab houses complete, state-of-the-art facilities to conduct a variety of capacitance and current-based trap spectroscopies applicable to semiconductors that include GaN, AlN, GaAs, InP, AlInGaP, SiGe, SiC, InGaAsN and others.  Both conventional deep level transient spectroscopy (DLTS) and photocapacitance-based deep level optical spectroscopy (DLOS) facilities designed by EMDL researchers are used in various configurations, the latter of which allows for unprecedented trap characterization abilities for materials having bandgaps up to 10eV.

Major Facilities:

• Deep Level Transient Spectroscopy (DLTS)

• Deep Level Optical Spectroscopy (DLOS)

• Optical DLTS

• Thermally Stimulated Current

• Admittance Spectroscopy

• C-V, C-T, C-f, G-V, G-T, G-f measurements