Refereed Publications of Paul R. Berger, Professor

Invited Papers

  1. "Metal-Semiconductor-Metal Photodetectors,'' Paul R. Berger, IEEE Potentials, April/May, pp. 25-29 (1996). PDF (1437 kB)

Publications

  1. "Si/SiGe Resonant Interband Tunneling Diodes Incorporating Delta-Doping Layers Grown by Chemical Vapor Deposition," Si-Young Park, R. Anisha, Paul R. Berger, Roger Loo, Ngoc Duy Nguyen, Shotaro Takeuchi, and Matty Caymax, IEEE Electron Device Letters, 30, pp. 1173-1175 (November 2009). PDF (145 kB)

  2. "Observation of Strain in Pseudomorphic Si1-xGex by Tracking Phonon Participation in Si/SiGe Resonant Interband Tunnel Diodes via Electron Tunneling Spectroscopy," Ronghua Yu, R. Anisha, Niu Jin, Sung-Yong Chung, Paul R. Berger, Thomas J. Gramila, Phillip E. Thompson, Journal of Applied Physics, 106, 034501 (August 1, 2009). PDF (335 kB)

  3. "P and B doped Si Resonant Interband Tunnel Diodes with As-grown Negative Differential Resistance," Phillip E. Thompson, Glenn G. Jernigan, Si-Young Park, Ronghua Yu, R. Anisha, Paul R. Berger, David Pawlik, Raymond Krom, and Sean L. Rommel, Electronics Letters, 45, pp. 759-761 (July 2, 2009). PDF (189 kB)

  4. "Strain Engineered Si/SiGe Resonant Interband Tunneling Diodes with Outside Barriers Grown on Si0.8Ge0.2 Virtual Substrates," R. Anisha, Niu Jin, Sung-Yong Chung, Ronghua Yu, Paul R. Berger, and Phillip E. Thompson, Applied Physics Letters, 93, 102113 (September 11, 2008). PDF (102 kB)

  5. "Enhanced Emission using Thin Li-Halide Cathodic Interlayers for Improved Injection into Poly(p-phenylene vinylene) Derivative PLEDs," Woo-Jun Yoon, Scott B. Orlove, Robert L. Olmon, and Paul R. Berger, Electrochemical and Solid-State Letters, 11, pp. J76-J78 (2008). PDF (319 kB)

  6. "Plasma Polymerized Multistacked Organic Bipolar Films: A New Approach to Flexible High k-Dielectrics," Dhiman Bhattacharyya, Woo-Jun Yoon, Paul R. Berger and Richard B. Timmons, Advanced Materials, 20, pp. 2383-2388 (June 18, 2008). PDF (268 kB)

  7. "Strain Engineered Si/SiGe Resonant Interband Tunneling Diodes Grown on Si0.8Ge0.2 Virtual Substrates," Niu Jin, Ronghua Yu, Sung-Yong Chung, Paul R. Berger, and Phillip E. Thompson, IEEE Electron Device Letters, 29, pp. 599-602 (June 2008). PDF (169 kB)

  8. "4.8% Efficient Poly(3-hexylthiophene)-Fullerene (1:0.8) Bulk Heterojunction Photovoltaic Devices with Plasma Treated AgOx/ITO Anode Modification," Woo-Jun Yoon and Paul R. Berger, Applied Physics Letters, 92, 013306 (January 7, 2008). PDF (312 kB)

  9. "Synthesis, Characterization, and Electrical Properties of Individual Au-NiO-Au Heterojunction Nanowires," Jason S. Tresback, Alexander L. Vasiliev, Nitin P. Padture, Si-Young Park, and Paul R. Berger, IEEE Transactions on Nanotechnology, 6, pp. 676-681 (November 2007). PDF (1921 kB)

  10. "Sensitivity of Si-Based Zero-Bias Backward Diodes for Microwave Detection," Si-Young Park, Ronghua Yu, Sung-Yong Chung, Paul R. Berger, Phillip E. Thompson, and Patrick Fay, Electronics Letters, 43, pp. 53-54 (March 1, 2007). PDF (118 kB)

  11. "Analysis of Voltage Swing in Si/SiGe Resonant Interband Tunnel Diodes," Sung-Yong Chung, Niu Jin, Ryan E. Pavlovicz, Ronghua Yu, Paul R. Berger, and Phillip E. Thompson, IEEE Transactions on Nanotechnology, 6, pp. 158-163 (March 2007). PDF (976 kB)

  12. "The Effect of Spacer Thickness on Si-based Resonant Interband Tunneling Diode Performance and their Application to Low-Power Tunneling Diode SRAM Circuits," Niu Jin, Sung-Yong Chung, Ronghua Yu, Roux M. Heyns, Paul R. Berger, and Phillip E. Thompson, IEEE Transactions on Electron Devices, 53, pp. 2243-2249 (September 2006). PDF (243 kB)

  13. "Integration of Si/SiGe HBT and Si-based RITD Demonstrating Controllable Negative Differential Resistance for Wireless Applications," Sung-Yong Chung, Si-Young Park, Jeffrey W. Daulton, Ronghua Yu, Paul R. Berger, and Phillip E. Thompson, Solid State Electronics, 50, pp. 973-978 (June 2006). PDF (168 kB)

  14. "Low Sidewall Damage Plasma Etching Using ICP-RIE with an HBr Chemistry of Si/SiGe Resonant Interband Tunnel Diodes," Si-Young Park, Sung-Yong Chung, Ronghua Yu, Paul R. Berger, and Phillip E. Thompson," Electronics Letters, 42, pp. 69-70 (June 8, 2006). PDF (143 kB)

  15. "Si/SiGe Resonant Interband Tunnel Diode with fr0 20.2 GHz and Peak Current Density 218 kA/cm2 for K-band Mixed-Signal Applications," Sung-Yong Chung, Ronghua Yu, Niu Jin, Si-Young Park, Paul R. Berger, and Phillip E. Thompson, IEEE Electron Device Letters, 27, pp. 364-367 (May 2006). PDF (146 kB)

  16. "Pulsed Plasma Polymerized Dichlorotetramethyldisiloxane High-k Gate Dielectrics for Polymer Field Effect Transistors," Yifan Xu, Paul R. Berger, Jai Cho and Richard B. Timmons, Journal of Applied Physics, 99, 014104 (January 1, 2006). PDF (78 kB)

  17. "Room Temperature Negative Differential Resistance in Polymer Tunnel Diodes using a Thin Oxide Layer at the Anode and Demonstration of Threshold Logic," Woo-Jun Yoon, Sung-Yong Chung, Paul R. Berger, and Sita M. Asar, Applied Physics Letters, 87, 203506 (November 14, 2005). PDF (173 kB)

  18. "RF Performance and Modeling of Si/SiGe Resonant Interband Tunneling Diodes," Niu Jin, Sung-yong Chung, Ronghua Yu, Sandro J. Di Giacomo, Paul R. Berger, and Phillip E. Thompson, IEEE Transactions on Electron Devices, 52, pp. 2129-2135 (October 2005). PDF (615 kB)

  19. "High Sensitivity Si-Based Backward Diodes for Zero-Biased Square-Law Detection and the Effect of Post-Growth Annealing on Performance," Niu Jin, Ronghua Yu, Sung-Yong Chung, Paul R. Berger, Phillip E. Thompson, and Patrick Fay, IEEE Electron Device Letters, 26, pp. 575-578 (August 2005). PDF (117 kB)

  20. "Temperature Dependent DC/RF Performance of Si/SiGe Resonant Interband Tunneling Diodes," Niu Jin, Sung-Yong Chung, Ronghua Yu, Paul R. Berger, and Phillip E. Thompson, Electronics Letters, 41, pp. 559-560 (April 28, 2005). PDF (1,617 kB)

  21. "Phosphorus Diffusion in Si-Based Resonant Interband Tunneling Diodes and Tri-State Logic Using Vertically Stacked Diodes," Niu Jin, Sung-Yong Chung, Roux M. Heyns, Paul R. Berger, Ronghua Yu, Phillip E. Thompson, and Sean L. Rommel, Materials Science in Semiconductor Processing, 8, pp. 411-416 (2005). PDF (227 kB)

  22. "Improved Vertically Stacked and Serially Connected Si/SiGe Resonant Interband Tunneling Diode Pair Showing Small Peak Shift and Unequal Peak Currents," Niu Jin, Sung-Yong Chung, Ronghua Yu, Paul R. Berger, and Phillip E. Thompson, Electronics Letters, 40, pp. 1548-1549 (November 25, 2004). PDF (229 kB)

  23. "Photoresponsivity of Polymer Thin Film Transistors Based on PPE Derivative with Improved Hole-Injection," Yifan Xu, Paul R. Berger, James N. Wilson and Uwe H.F. Bunz, Applied Physics Letters, 85, pp. 4219-4221 (November 1, 2004). PDF (73 kB)

  24. "C-V Characterization of Pulsed Plasma Polymerized Allylamine Dielectrics," Yifan Xu, Paul R. Berger, Jai Cho and Richard B. Timmons, Journal of Electronic Materials, 33, pp. 1240-1247 (October 2004). PDF (585 kB)

  25. "Monolithically Integrated Si/SiGe Resonant Interband Tunnel Diode/CMOS Demonstrating Low Voltage MOBILE Operation," S. Sudirgo, R.P. Nandgaonkar, B. Curanovic, J.L. Hebding, R.L. Saxer, S.S. Islam, K.D. Hirschman, S.L. Rommel, S.K. Kurinec, P.E. Thompson, N. Jin, and P.R. Berger, Solid State Electronics, 48, pp. 1907-1910 (October/November 2004). PDF (296 kB)

  26. "Tri-State Logic Using Vertically Integrated Si Resonant Interband Tunneling Diodes with Double NDR," Niu Jin, Sung-Yong Chung, Roux M. Heyns, and Paul R. Berger, Ronghua Yu, Phillip E. Thompson, and Sean L. Rommel, IEEE Electron Device Letters, 25, pp. 646-648 (September 2004). PDF (108 kB)

  27. "Annealing Effect on Defects in Si Grown by Low Temperature Molecular Beam Epitaxy and its Attribution to the Excess Currents in Si-Based Tunnel Diodes," Sung-Yong Chung, Niu Jin, Ryan E. Pavlovicz, Paul R. Berger, Ronghua Yu, Zhaoqiang Fang, Phillip E. Thompson, Journal of Applied Physics, 96, pp. 747-753 (July 1, 2004). PDF (99 kB)

  28. "Radiation Tolerance of Si/Si0.6Ge0.4 Resonant Interband Tunneling Diodes," B. D. Weaver, P. E. Thompson, N. Jin, S-Y. Chung, A. T. Rice, and P. R. Berger, Journal of Applied Physics , 95 , pp. 6406-6408 (June 1, 2004). PDF (52 kB)

  29. "3-Terminal Si-Based Negative Differential Resistance Circuit Element with Adjustable Peak-To-Valley Current Ratios Using a Monolithic Vertical Integration," Sung-Yong Chung, Niu Jin, and Paul R. Berger, Ronghua Yu, Phillip E. Thompson, Roger Lake, Sean L. Rommel and Santosh K. Kurinec, Applied Physics Letters , 84 , pp. 2688-2690 (April 5, 2004). PDF (64 kB)

  30. "High Electric Field Effects on Short Channel Polythiophene Polymer Field Effect Transistors," Yifan Xu and Paul R. Berger, Journal of Applied Physics , 95 , pp. 1497-1501 (February 1, 2004). PDF (98 kB)

  31. "Nanometer-Period Gratings in Hydrogen Silsesquioxane Fabricated by Electron Beam Lithography," Michael J. Word, Ilesanmi Adesida, and Paul R. Berger, Rapid Communications in Journal of Vacuum Science and Technology B , 21 , pp. L12-L15 (November/December 2003). PDF (603 kB)

  32. "151 kA/cm2 Peak Current Densities in Si/SiGe Resonant Interband Tunneling Diodes for High-Power Mixed-Signal Applications," Niu Jin, Sung-Yong Chung, Anthony T. Rice, Paul R. Berger, Ronghua Yu, Phillip E. Thompson, and Roger Lake, Applied Physics Letters, 83, pp. 3308-3310 (October 20, 2003). PDF (61 kB)

  33. "Full Band Modeling of the Excess Current in a Delta-Doped Silicon Tunnel Diode," Cristian Rivas and Roger Lake, William R. Frensley, Gerhard Klimeck, Phillip E. Thompson, Karl D. Hobart, Sean L. Rommel, and Paul R. Berger, Journal of Applied Physics, 94, pp. 5005-5013 (October 15, 2003). PDF (155 kB).

  34. "Diffusion Barrier Cladding in Si/SiGe Resonant Interband Tunneling Diodes And Their Patterned Growth on PMOS Source/Drain Regions," Niu Jin, Sung-Yong Chung, Anthony T. Rice, Paul R. Berger, Phillip E. Thompson, Cristian Rivas, Roger Lake, Stephen Sudirgo, Jeremy J. Kempisty, Branislav Curanovic, Sean L. Rommel, Karl D. Hirschman, Santosh K. Kurinec, Peter H. Chi and David S. Simons, Special Issue on "Nanoelectronics" in IEEE Transactions on Electron Devices, 50, pp. 1876-1884 (September 2003). PDF (377 kB)

  35. "Growth Temperature and Dopant Species Effects on Deep-Levels in Si Grown by Low Temperature Molecular Beam Epitaxy," Sung-Yong Chung, Niu Jin, Anthony T. Rice, Paul R. Berger, Ronghua Yu, Z-Q. Fang, and Phillip E. Thompson, Journal of Applied Physics , 93, pp. 9104-9110 (June 2003). PDF (93 kB)

  36. "A PNP Si Resonant Interband Tunnel Diode with Symmetrical NDR," Niu Jin, Paul R. Berger, Sean L. Rommel, Phillip E. Thompson and Karl D. Hobart, Electronics Letters , 37, pp. 1412-1414 (November 8, 2001). PDF (441 kB)

  37. "A P-on-N Si Interband Tunnel Diode Grown by Molecular Beam Epitaxy," K. D. Hobart, P. E. Thompson, S. L. Rommel, T. E. Dillon, P. R. Berger, D. S. Simons and P. H. Chi, Journal of Vacuum Science and Technology B, 19, pp. 290-293 (Jan/Feb 2001). PDF (58 kB)

  38. "Full Band Simulation of Indirect Phonon Assisted Tunneling in a Silicon Tunnel Diode with Delta-Doped Contacts," Cristian Rivas, Roger Lake, Gerhard Klmeck, William R. Frensley, Massimo V. Fischetti, Phillip E. Thompson, Sean L. Rommel and Paul R. Berger, Applied Physics Letters , 78, pp. 814-816 (February 5, 2001). PDF (97 kB)

  39. "Epitaxial Si-Based Tunnel Diodes," P. E. Thompson, K. D. Hobart, M. E. Twigg, S. L. Rommel, N. Jin, P. R. Berger, R. Lake, A. C. Seabaugh, P. H. Chi and D. S. Simons, Thin Solid Films, 380, pp. 145-150 (December 22, 2000). PDF (273 kB)

  40. "Current Voltage Characteristics of High Current Density Silicon Esaki Diodes Grown by Molecular Beam Epitaxy and the Influence of Thermal Annealing," M. W. Dashiell, R. T. Troeger, S. L. Rommel, T. N. Adam, P. R. Berger, J. Kolodzey, A. C. Seabaugh and R. Lake, IEEE Transactions on Electron Devices , 47, pp. 1707-1714 (September 2000). PDF (178 kB)

  41. "Si Resonant Interband Tunnel Diodes Grown by Low Temperature Molecular Beam Epitaxy," Phillip E. Thompson, Karl D. Hobart, Mark Twigg, Glenn Jernigan, Thomas E. Dillon, Sean L. Rommel, Paul R. Berger, David S. Simons, Roger Lake and Alan C. Seabaugh, Applied Physics Letters, 75, pp. 1308-1310 (August 30, 1999). PDF (46 kB)

  42. "Epitaxially Grown Si Resonant Interband Tunnel Diodes Exhibiting High Current Densities," Sean L. Rommel, Thomas E. Dillon, Paul R. Berger, Phillip E. Thompson, Karl D. Hobart, Roger Lake, and Alan C. Seabaugh, IEEE Electron Device Letters, 20, pp. 329-331 (July 1999). PDF (75 kB)

  43. "Strain Modification in Thin Si1-x-yGexCy Alloys on (100) Si for Formation of High Density and Uniformly Sized Quantum Dots," Xiaoping Shao, Ralf Jonczyk, M. W. Dashiell, D. Hits, B. A. Orner, A-S. Khan, K. Roe, J. Kolodzey, Paul R. Berger, M. Kaba and M. A. Barteau, K. M. Unruh, Journal of Applied Physics, 85, pp. 578-582 (January 1, 1999). PDF (2954 kB)

  44. "Room Temperature Operation of Epitaxially Grown Si/Si0.5Ge0.5/Si Resonant Interband Tunneling Diodes," Sean L. Rommel, Thomas E. Dillon, M. W. Dashiell, H. Feng, J. Kolodzey, Paul R. Berger, Phillip E. Thompson, Karl D. Hobart, Roger Lake, Alan C. Seabaugh, Gerhard Klimeck, and Daniel K. Blanks, Applied Physics Letters, 73, pp. 2191-2193 (October 12, 1998). PDF (71 kB)

  45. "Electrical and Optical Properties of Phosphorous Doped Ge1-yCy," M. W. Dashiell, R. T. Troeger, K. J. Roe, A. S. Khan, B. Orner, J. O. Olowolafe, P. R. Berger, R. G. Wilson, and J. Kolodzey, Thin Solid Films, 321, pp. 47-50 (May 26, 1998). PDF (107 kB)

  46. "1.3 Micron Photoresponsivity in Si-Based Ge1-xCx Photodiodes," Xiaoping Shao, S. L. Rommel, B. A. Orner, H. Feng, M. W. Dashiell, R. T. Troeger, J. Kolodzey, Paul R. Berger, and Thomas Laursen, Applied Physics Letters, 72, pp. 1860-1862 (April 13, 1998). PDF (72 kB)

  47. "In0.53Ga0.47As MSM Photodiodes with Transparent CTO Schottky Contacts and Digital Superlattice Grading," Wei Gao, Paul R. Berger, George J. Zydzik, Henry M. O'Bryan, Deborah L. Sivco, and Alfred Y. Cho, IEEE Transactions on Electron Devices, 44, pp. 2174-2179 (December 1997). PDF (242 kB)

  48. "A p-Ge1-xCx/n-Si Heterojunction Diode Grown by Molecular Beam Epitaxy," Xiaoping Shao, S. L. Rommel, B. A. Orner, J. Kolodzey, and Paul R. Berger, IEEE Electron Device Letters, 18, pp. 411-413 (September 1997). PDF (75 kB)

  49. "Near Band Edge Photoluminescence from Pseudomorphic Tensially Strained Si0.985C0.015 Alloy," Al-Sameen T. Khan, Paul R. Berger, Fernando J. Guarin, and Subramanian S. Iyer, Thin Solid Films, 294, pp. 122-124 (February 15, 1997). PDF (239 kB)

  50. "Low Resistance Ohmic Contacts to p-Ge1-xCx on Si," Xiaoping Shao, S. L. Rommel, B. A. Orner, Paul R. Berger, J. Kolodzey, and K. M. Unruh, IEEE Electron Device Letters, 18, pp. 7-9 (January 1997). PDF (90 kB)

  51. "Liquid Phase Epitaxial Growth of InGaAs on InP Using Rare Earth Treated Melts," Wei Gao, Paul R. Berger, Matthew H. Ervin, Jagadeesh Pamulapati, Richard T. Lareau, Stephen Schauer, Journal of Applied Physics, 80, pp. 7094-7103 (December 15, 1996). PDF (279 kB)

  52. "Current Transport Characteristics of SiGeC/Si Heterojunction Diode," F. Chen, B. A. Orner, D. Guerin, A. Khan, P. R. Berger, S. Ismat Shah, and J. Kolodzey, IEEE Electron Device Letters, 17, pp. 589-591 (December 1996). PDF (251 kB)

  53. "Band Edge Photoluminescence from Pseudomorphic Si0.96Sn0.04 Alloy,'' Al-Sameen T. Khan, Paul R. Berger, Fernando J. Guarin, and Subramanian S. Iyer, Applied Physics Letters, 68, pp. 3105-3107 (May 27, 1996). PDF (65 kB)

  54. "Realization of In-Situ Sub Two-Dimensional Quantum Structures by Strained Layer Growth Phenomena in the InxGa1-xAs/GaAs System," J. Pamulapati, P. K. Bhattacharya, J. Singh, P. R. Berger, C. W. Snyder, B. G. Orr, and R. L. Tober, Journal of Electronic Materials, 25, pp. 479-483 (March 1996). PDF (1.25 MB)

  55. "Optical Properties of Ge1-yCy Alloys," B. Orner, A. Khan, D. Hits, F. Chen, K. Roe, J. Pickett, X. Shao, R. G. Wilson, P. R. Berger, and J. Kolodzey, Journal of Electronic Materials, 25, pp. 297-300 (February 1996).

  56. "Optical and Electronic Properties of SiGeC Alloys Grown on Si substrates," J. Kolodzey, P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M. M. Waite, S. Ismat Shah, C. P. Swann, and K. M. Unruh, Journal of Crystal Growth, 157, pp. 386-391 (December 1995). PDF (380 kB)

  57. "Transparent and Opaque Schottky Contacts on In0.52Al0.48As," Wei Gao, Paul R. Berger, Robert G. Hunsperger, G. Zydzik, W. W. Rhodes, H. M. O'Bryan, D. Sivco, and A. Y. Cho, Applied Physics Letters, 66, pp. 3471-3473 (June 19, 1995). PDF (67 kB)

  58. "In0.53Ga0.47As Metal-Semiconductor-Metal Photodiodes with Transparent Cadmium Tin Oxide Schottky Contacts," Wei Gao, Al-Sameen Khan, Paul R. Berger, Robert Hunsperger, George Zydzik, H. M. O'Bryan, D. Sivco, and A. Y. Cho, Applied Physics Letters, 65, pp. 1930-1932 (October 10, 1994). PDF (75 kB)

  59. "Monolithic GaAs/AlGaAs Optical Transmitter Using a Single Growth Step," D. Nichols, J. Lopata, W. S. Hobson, N. K. Dutta, P. R. Berger, D. Sivco, and A. Y. Cho, Electronics Letters, 30, pp. 490-491 (March 17, 1994). PDF (161 kB)

  60. "10 GHz Bandwidth Monolithic pin Modulation-Doped Field Effect Transistor Photoreceiver," N. K. Dutta, J. Lopata, P. R. Berger, S. J. Wang, P. R. Smith, D. Sivco, and A. Y. Cho, Applied Physics Letters, 63, pp. 2115-2116 (October 11, 1993). PDF (249 kB)

  61. "Monolithic GaAs/AlGaAs p-i-n MESFET Photoreceiver Using a Single Molecular Beam Epitaxy Growth Step," D. Nichols, N. K. Dutta, P. R. Berger, P. R. Smith, D. Sivco, and A. Y. Cho, Electronics Letters, 29, pp. 1133-1134 (June 10, 1993). PDF (216 kB)

  62. "Substrate Orientation Effects on Dopant Incorporation in InP Grown by Metaloganic Chemical Vapor Deposition," Paul R. Berger, S. N. G. Chu, R. A. Logan, E. Byrne, D. Coblentz, James Lee III, Nhan T. Ha, and N. K. Dutta, Journal of Applied Physics, 73, pp. 4095-4097 (April 15, 1993). PDF (389 kB) Erratum: Journal of Applied Physics, 76, p. 2562 (August 15, 1994). PDF (36 kB)

  63. "8-Element Linear Array of Monolithic pin-MODFET Photoreceivers Using Molecular Beam Epitaxial Regrowth," Paul R. Berger, Niloy K. Dutta, Dexter A. Humphrey, Peter R. Smith, Sheunn-Jyi Wang, R. K. Montgomery, D. Sivco, and A. Y. Cho, IEEE Photonics Technology Letters, 5, pp. 63-66 (January 1993). PDF (399 kB)

  64. "In0.53Ga0.47As p-i-n Photodiodes with Transparent Cadmium Tin Oxide Contacts," Paul R. Berger, Niloy K. Dutta, George Zydzik, Hank M. O'Bryan, Ursula Keller, Peter R. Smith, John Lopata, D. Sivco, and A. Y. Cho, Applied Physics Letters, 61, pp. 1673-1675 (October 5, 1992). PDF (341 kB)

  65. "1.0 GHz Monolithic pin-MODFET Photoreceiver Using Molecular Beam Epitaxial Regrowth," Paul R. Berger, Niloy K. Dutta, Dexter A. Humphrey, Peter R. Smith, Sheunn-Jyi Wang, R. K. Montgomery, D. Sivco, and A. Y. Cho, IEEE Photonics Technology Letters, 4, pp. 891-894 (August 1992). PDF (344 kB)

  66. "A GaAs Quantum Well Laser and Heterojunction Bipolar Transistor Integration Using Molecular Beam Epitaxial Regrowth," Paul R. Berger, N. K. Dutta, D. L. Sivco, and A. Y. Cho, Applied Physics Letters, 59, pp. 2826-2828 (November 25, 1991). PDF (380 kB)

  67. "An AlGaAs Double Heterojunction Bipolar Transistor Grown by Molecular Beam Epitaxy," Paul R. Berger, Naresh Chand, and Niloy K. Dutta, Applied Physics Letters, 59, pp. 1099-1101 (August 26, 1991). PDF (387 kB)

  68. "Substantial Improvement by Substrate Misorientation in DC Performance of Al0.5Ga0.5As/GaAs/ Al0.5Ga0.5As Double Heterojunction NpN Bipolar Transistors Grown by Molecular Beam Epitaxy," Naresh Chand, Paul R. Berger, and Niloy K. Dutta, Applied Physics Letters, 59, pp. 186-188 (July 8, 1991). PDF (473 kB)

  69. "Monolithically Peltier-cooled Vertical-cavity Surface Emitting Lasers," Paul R. Berger, Niloy K. Dutta, Kent D. Choquette, Ghulam Hasnain, and Naresh Chand, Applied Physics Letters, 59, pp. 117-119 (July 1, 1991). PDF (291 kB)

  70. "Monolithic Integration of GaAs and In0.2Ga0.8As Lasers By Molecular Beam Epitaxy on GaAs," Paul R. Berger, N. K. Dutta, J. Lopata, S. N. G. Chu, and Naresh Chand, Applied Physics Letters, 58, pp. 2698-2700 (June 10, 1991). PDF (415 kB)

  71. "Monolithically Integrated InP-based Front End Photoreceivers," Yousef Zebda, Richard Lai, Pallab Bhattacharya, Dimitris Pavlidis, Paul R. Berger, and Timothy L. Brock, IEEE Transactions on Electron Devices, ED-38, pp. 1324-1333 (June 1991). PDF (931 kB)

  72. "Performance Characteristics of InGaAs/GaAs Large Optical Cavity Quantum Well Lasers," N. K. Dutta, J. Lopata, P. R. Berger, D. L. Sivco, and A. Y. Cho, Electronics Letters, 27, pp. 680-682 (April 11, 1991). PDF (218 kB)

  73. "A Waveguide Directional Coupler With A Nonlinear Coupling Media," Paul R. Berger, Pallab Bhattacharya, and Shantanu Gupta, Special Issue of Journal of Quantum Electronics on Photonic Devices and Circuits, QE-27, pp. 788-795 (March 1991). PDF (645 kB)

  74. "The Relation of the Performance Characteristics of Pseudomorphic In0.53+xGa0.47-xAs/ In0.52Al0.48As (0 < x < 0.32) Modulation Doped Field Effect Transistors to Molecular Beam Epitaxial Growth Modes," J. Pamulapati, R. Lai, G. I. Ng, Y. C. Chen, P. R. Berger, P. K. Bhattacharya, J. Singh, and D. Pavlidis, Journal of Applied Physics, 68, pp. 347-350 (July 1, 1990). PDF (777 kB)

  75. "Growth Phenomena and Characteristics of Strained InxGa1-xAs on GaAs," J. Pamulapati, P. Berger, K. Chang, J. Oh, Yi Chen, J. Singh, and P. Bhattacharya, Journal of Crystal Growth, 95, pp. 193-196 (1989).

  76. "Investigation of the Interface Region Produced by Molecular Beam Epitaxial Regrowth," D. Biswas, P. R. Berger, U. Das, J. E. Oh, and P. K. Bhattacharya, Journal of Electronic Materials, 18, pp. 137-142 (March 1989). PDF (832 kB)

  77. "Recombination Velocity at Molecular Beam Epitaxial GaAs Regrown Interfaces," D. Biswas, P. R. Berger, and P. K. Bhattacharya, Journal of Applied Physics, 65, pp. 2571-2573 (March 15, 1989). PDF (465 kB)

  78. "Orientation-Dependent Phase Modulation in InGaAs/GaAs Multiquantum Well Waveguides," Utpal Das, Yi Chen, Pallab Bhattacharya, and Paul R. Berger, Applied Physics Letters, 53, pp. 2129-2131 (November 28, 1988). PDF (485 kB)

  79. "Role of Strain and Growth Conditions on the Growth Front Profile of InxGa1-xAs on GaAs During the Pseudomorphic Growth Regime," Paul R. Berger, Kevin Chang, Pallab Bhattacharya, Jasprit Singh and K. K. Bajaj, Applied Physics Letters, 53, pp. 684-686 (August 22, 1988). PDF (572 kB)

  80. "Demonstration of All-Optical Modulation in a Vertical Guided Wave Nonlinear Coupler," Paul R. Berger, Yi Chen, Pallab K. Bhattacharya, Jagadeesh Pamulapati, and G. C. Vezzoli, Applied Physics Letters, 52, pp. 1125-1127 (April 4, 1988). PDF (578 kB)

  81. "InGaAs/GaAs Multiquantum Well Electro-Absorption Modulator with Integrated Waveguide," Utpal Das, Paul R. Berger, and Pallab K. Bhattacharya, Optics Letters, 12, pp. 820-822 (October 1987). PDF (489 kB)

  82. "A Study of Strain Related Effects in the MBE Growth of InxGa1-xAs on GaAs Using RHEED," Paul R. Berger, Kevin Chang, Pallab K. Bhattacharya, and Jasprit Singh, Journal of Vacuum Science and Technology B, 5, pp. 1162-1166 (July/August 1987). PDF (536 kB)

  83. "Molecular Beam Epitaxial Growth and Luminescence of InxGa1-xAs/InxAl1-xAs Multiquantum Wells On GaAs," Kevin Chang, Paul R. Berger, Jasprit Singh, and Pallab K. Bhattacharya, Applied Physics Letters, 51, pp. 261-263 (July 27, 1987). PDF (395 kB)

  84. "A Comparative Study of the Growth processes of GaAs, AlGaAs, InGaAs and InAlAs Lattice Matched and Non-lattice Matched Semiconductors Using High Energy Electron Diffraction," Paul R. Berger, Pallab K. Bhattacharya, and Jasprit Singh, Journal of Applied Physics, 61, pp. 2856-2860 (April 15, 1987). PDF (789 kB)

  85. "Growth and Properties of In0.52Al0.48As/ In0.53Ga0.47As GaAs:In and InGaAs/GaAs Multilayers," F-Y. Juang, W-P. Hong, P. R. Berger, P. K. Bhattacharya, U. Das, and J. Singh, Journal of Crystal Growth, 81, pp. 373-377 (1987).

  86. "Anomalous Effects of Lamp Annealing in Modulation-doped In0.53Ga0.47As/In0.52Al0.48As and Si-implanted In0.53Ga0.47As," K. S. Seo, P. R. Berger, G. P. Kothiyal, and P. K. Bhattacharya, IEEE Transactions on Electron Devices, ED-34, pp. 235-240 (February 1987). PDF (795 kB)

  87. "Low Defect Densities in Molecular Beam Epitaxial GaAs Achieved by Isoelectronic In Doping," Pallab K. Bhattacharya, Sunada Dhar, Paul Berger, and Feng-Yuh Juang, Applied Physics Letters, 49, pp. 470-472 (August 25, 1986). PDF (279 kB)

  88. "Investigation of Molecular Beam Epitaxial In0.53Ga0.47As Regrown on Liquid Phase Epitaxial In0.53Ga0.47As/InP," Y. Nashimoto, S. Dhar, W-P. Hong, A. Chin, P. Berger, and P. K. Bhattacharya, Journal of Vacuum Science and Technology B, 4, pp. 540-542 (Mar/Apr 1986). PDF (373 kB)

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