EE734 Example

A simple simulation of a LOCOS process

EE734

Back to the Table of Contents for the example

Nitride Deposition

To add the silicon nitride for the LOCOS process I selected Commands ® Process ® Deposit ® Deposit. Since this is a blanket deposition on a flat surface I did not do anything fancy. I selected a Conformal deposition. This basically tells the simulator to add a constant thickness of silicon nitride everywhere. It is possible to simulate step coverage, etc. on a non-flat surface using other options. For this simple deposition I selected the material to be Nitride and set the Thickness to 0.08 mm (Basic Parameters). I set the Nominal Grid Spacing to 0.02 mm (Grid).

Let's assume that during the silicon nitride deposition the wafers will be hot at 800° C for 15 minutes. Since the nitride deposition command added above directly adds a nitride layer without really simulating a deposition, I added another nitrogen anneal, this time at 800° C for 15 min, to simulate the diffusion that will take place while the wafer is hot during the nitride deposition.

Table of Contents

Pad Oxidation

Nitride Etch (Mask 1)

EE734|Electrical Engineering

Please report problems with this page to George Valco (valco@ee.eng.ohio-state.edu)