EE734 Example

A simple simulation of a LOCOS process

EE734

Back to the Table of Contents for the example

Nitride Etch

To remove the nitride I did a simple Geometrical etch. I selected Commands ® Process ® Etch ® Etch. I set it up to etch Material nitride Left of Etch Location = 5 mm. This will remove the nitride from half of the sample and puts the boundary for the selective oxidation in the middle of the sample. This geometric etch basically simulates a perfectly vertical etch that is also perfectly selective to etch only nitride.

Table of Contents

Nitride Deposition

LOCOS Oxidation


EE734|Electrical Engineering


Please report problems with this page to George Valco (valco@ee.eng.ohio-state.edu)