The first step of the simulation will be growth of the pad oxide. Oxidation is simulated through the Diffuse command with an oxygen (or wet oxygen) ambient. To generate the command for this process I used the RMB to select Commands ® Process ® Diffuse. I made sure that Time/Temp and Ambient were selected for display.

I then selected dry oxidation for 45 min at 1000° C and 1 Atm with no HCl. I also selected a constant temperature. (Note: If you have trouble getting exactly the number you want using a slider bar you can always click on the number and type the desired value.) Since I am not adding impurities I did not display the Impurities settings. I looked at the Models, but kept them at their default values (Fermi model for diffusion, Compressible model for oxidation).

I repeated the process with a nitrogen ambient to model a 10 minute nitrogen anneal at the end of the oxidation. (While there is no more oxidation taking place during this step, diffusion of impurities during this high temperature anneal will be simulated.)

Table of Contents

Grid Definition

Nitride Deposition

EE734|Electrical Engineering