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EE734 Example A simple simulation of a LOCOS process |
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Back to the Table of Contents for the example |
Results |
To run the simulation click on run, found on the middle menu bar of DeckBuild. More information on other features of this menu bar can be found in the Silvaco tutorial. The progress of the simulation will be shown in the lower window of DeckBuild.
To plot the final or intermediate results you can either start up TonyPlot from within Master File and Application Manager or select the entire structure filename in DeckBuild and select Tools ® Plot.
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Once TonyPlot is running you can use its menu selections to load or unload other structure files and to display the results in many different formats. Plot ® Display brings up a tool bar for controlling what is displayed. |
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This figure shows the material results at the end of the process. |
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This figure shows the final grid. The density down the center of the structure is probably denser than was needed. |
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The next figure shows the doping profile under the field oxide and in the active area (in the region protected by field oxidation by the silicon nitride). These plots were generated by using Tools ® Cutline to select the lines along which the profiles were extracted. I selected vertical cutlines for both graphs. For the left graph I selected a horizontal position of 1 mm. For the right graph I selected a horizontal position of 9 mm. The vertical extent went from -0.4 to 1 mm in both graphs. These coordinates refer to grid locations in the graphs above.
Note that under the field oxide, where a significant amount of new oxide was grown, there was more dopant lost to the oxide. Under the nitride, where little additional oxide was grown there still was some out diffusion of dopant into the oxide. In both cases note the segregation right at the Si/SiO2 interface. The boron prefers to segregate into the oxide so the concentration immediately on the oxide side of the interface is higher than immediately on the silicon side of the interface.
