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EE734 Example A simple simulation of a LOCOS process |
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Back to the Table of Contents for the example |
Defining the Si substrate |
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Use the right mouse button (RMB) to select Commands ® Mesh Initialize. This should produce a window such as the one shown here, which will allow you to define the structure for the start of the simulation. For this example I will set the parameters of the starting substrate using this window. |
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I selected (100) silicon doped with boron at a concentration of 2 ´ 1016 cm-3. I used the slider bar to specify the mantissa and the RMB to select the exponent for the doping concentration. I left the Dimensionality of the simulation set to Auto so that the simulator will run in 1-D as long as it can; until some 2-D structure is defined at the first masking step. (The starting sample is uniform across its entire surface in this example. I clicked on Write to accept the settings. This resulted in the init line being written in the upper DeckBuild window (the "Simulation Deck").
I then saved the file using a file name with an extension of ".in" to designate it as an input simulation deck. The Save command can be found under the File menu. I saved the file at frequent intervals throughout the rest of the procedure of creating the simulation deck.
