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Shamsul Arafin

  • Assistant Professor, Electrical & Computer Engr.
  • 2015 Neil Ave
    CL 205
    Columbus, OH 43210

About

Research website:

https://u.osu.edu/arafin.1 

Areas of interest

III-V compound semiconductor technology for materials and devices: molecular beam epitaxial growth and characterization of materials, as well as realization of photonic devices using these materials, such as GaN, GaAs, InP and GaSb. Basic III-V materials processing technology, device physics and design, device development and characterization, building complex photonic integrated circuits based on III-V as well as Silicon and the associated subsystems including analog coherent receivers, energy-efficient transceivers and photonic sensors; being eventually useful for both military and civilian applications. 

Addresses

Department of Electrical & Computer Engineering

205 Caldwell Laboratory       

2024 Neil Avenue

Columbus, OH 43210

(614) 247-2992                                                                                      

arafin.1@osu.edu

Office

205 Caldwell Laboratory       

Bio

Dr. Shamsul Arafin previously worked as a Project Scientist in the Department of Electrical and Computer Engineering at the University of California Santa Barbara (UCSB), CA, USA. Prior to joining UCSB, he worked as a Postdoctoral Research Scholar in Device Research Laboratory at the University of California Los Angeles, CA, USA. He received the B.Sc. degree in Electrical and Electronics Engineering from Bangladesh University of Engineering and Technology, Dhaka, Bangladesh, in 2005, the M.Sc. degree in communication technology from Universitat Ulm, Ulm, Germany, in 2008, and the Ph.D. degree from the Walter Schottky Institut, Technische Universitat Munchen, Munich, Germany, in 2012. He is a senior member of the IEEE and OSA.

Journal Articles

2016

  • Ikyo, A.B.; Marko, I.P.; Hild, K.; Adams, A.R. et al., 2016, "Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs)." Scientific Reports 6, no. 1,