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Shamsul Arafin

  • Assistant Professor, Electrical & Computer Engr.
  • 2015 Neil Ave
    CL 205
    Columbus, OH 43210

About

Research website:

https://u.osu.edu/arafin.1 

Areas of interest

III-V compound semiconductor technology for materials and devices: molecular beam epitaxial growth and characterization of materials, as well as realization of photonic devices using these materials, such as GaN, GaAs, InP and GaSb. Basic III-V materials processing technology, device physics and design, device development and characterization, building complex photonic integrated circuits based on III-V as well as Silicon and the associated subsystems including analog coherent receivers, energy-efficient transceivers and photonic sensors; being eventually useful for both military and civilian applications. 

Addresses

Department of Electrical & Computer Engineering

205 Caldwell Laboratory       

2024 Neil Avenue

Columbus, OH 43210

(614) 247-2992                                                                                      

arafin.1@osu.edu

Office

205 Caldwell Laboratory       

Bio

Dr. Shamsul Arafin previously worked as a Project Scientist in the Department of Electrical and Computer Engineering at the University of California Santa Barbara (UCSB), CA, USA. Prior to joining UCSB, he worked as a Postdoctoral Research Scholar in Device Research Laboratory at the University of California Los Angeles, CA, USA. He received the B.Sc. degree in Electrical and Electronics Engineering from Bangladesh University of Engineering and Technology, Dhaka, Bangladesh, in 2005, the M.Sc. degree in communication technology from Universitat Ulm, Ulm, Germany, in 2008, and the Ph.D. degree from the Walter Schottky Institut, Technische Universitat Munchen, Munich, Germany, in 2012. He is a senior member of the IEEE and OSA.

Journal Articles

2019

  • Arafin, S.; Mcfadden, A.P.; Paul, B.; Hasan, S.M.N. et al., 2019, "Study of wet and dry etching processes for antimonide-based photonic ICs." Optical Materials Express 9, no. 4,

2017

  • Arafin, S.; Simsek, A.; Lu, M.; Rodwell, M.J. et al., 2017, "Heterodyne locking of a fully integrated optical phase-locked loop with on-chip modulators." OPTICS LETTERS 42, no. 19, 3745-3748 - 3745-3748.

2016

  • Li, W.; Lu, M.; Mecozzi, A.; Vasilyev, M. et al., 2016, "First Monolithically Integrated Dual-Pumped Phase-Sensitive Amplifier Chip Based on a Saturated Semiconductor Optical Amplifier." IEEE JOURNAL OF QUANTUM ELECTRONICS 52, no. 1,

2014

  • Chu, C-P.; Arafin, S.; Huang, G.; Nie, T. et al., 2014, "Selectively grown GaAs nanodisks on Si(100) by molecular beam epitaxy." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 32, no. 2,

2011

  • Arafin, S.; Bachmann, A.; Vizbaras, K.; Hangauer, A. et al., 2011, "Comprehensive analysis of electrically-pumped GaSb-based VCSELs." OPTICS EXPRESS 19, no. 18, 17267-17282 - 17267-17282.

2009

  • Bachmann, A.; Arafin, S.; Kashani-Shirazi, K., 2009, "Single-mode electrically pumped GaSb-based VCSELs emitting continuous-wave at 2.4 and 2.6 mu m." NEW JOURNAL OF PHYSICS 11,

Papers in Proceedings

2018

  • Simsek, A.; Arafin, S.; Kim, S-K.; Morrison, G.B. et al. "Evolution of Chip-Scale Heterodyne Optical Phase-Locked Loops Toward Watt Level Power Consumption." in Optical Fiber Communications Conference and Exhibition (OFC). (1 2018).
  • Isaac, B.; Song, B.; Pinna, S.; Arafin, S. et al. "Indium Phosphide Photonic Integrated Circuit Transmitter with Integrated Linewidth Narrowing for Laser Communications and Sensing." in 26th IEEE International Conference on Semiconductor Laser. (1 2018).

2017

  • Eales, T.; Marko, I.P.; Ikyo, B.A.; Adams, A.R. et al. "Auger Recombination in Type I GaInAsSb/GaSb Lasers and its Variation with Wavelength in the 2-3 mu m Range." (1 2017).
  • Arafin, S.; Simsek, A.; Kim, S-K.; Dwivedi, S. et al. "Optical Frequency Synthesis by Offset-Locking to a Microresonator Comb." (1 2017).
  • Arafin, S.; Morrison, G.; Mashanovitch, M.; Johansson, L.A. et al. "Coupled-Cavity Lasers for a Low-Power Integrated Coherent Optical Receiver." (1 2017).
  • Arafin, S.; Simsek, A.; Kim, S-K.; Liang, W. et al. "Optical Frequency Synthesis by Offset-Locking the Tunable Local-Oscillator of a Low-Power Integrated Receiver to a Microresonator Comb." (1 2017).
  • Arafin, S.; Simsek, A.; Kim, S-K.; Rodwell, M.J. et al. "Optical Synthesis Using Kerr Frequency Combs." (1 2017).
  • Simsek, A.; Arafin, S.; Kim, S-K.; Morrison, G. et al. "A Chip-Scale Heterodyne Optical Phase-Locked Loop with Low-Power Consumption." (1 2017).

2016

  • Eales, T.; Marko, I.P.; Ikyo, B.A.; Adams, A.R. et al. "Wavelength dependence of efficiency limiting mechanisms in Type I GaInAsSb/GaSb lasers emitting in the mid-infrared." (1 2016).

2015

  • Alaskar, Y.; Arafin, S.; Lin, Q.; Wickramaratne, D. et al. "Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer." (9 2015).
  • Li, W.; Lu, M.; Johansson, L.; Mashanovitch, M. et al. "First Demonstration of an Integrated Photonic Phase Sensitive Amplifier." (1 2015).
  • Alaskar, Y.; Arafin, S.; Lin, Q.; Wickramaratne, D. et al. "Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer." in 18th International Conference on Molecular Beam Epitaxy (MBE 2014). (9 2015).

2013

  • Ikyo, B.A.; Marko, I.P.; Hild, K.; Adams, A.R. et al. "The effect of hole leakage and Auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers." in Conference on Lasers and Electro-Optics Europe & International Quantum Electronics Conference (CLEO/Europe-IQEC). (1 2013).
  • Ikyo, B.A.; Marko, I.P.; Hild, K.; Adams, A.R. et al. "The effect of hole leakage and Auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers." (1 2013).

2011

  • Ortsiefer, M.; Neumeyr, C.; Rosskopf, J.; Arafin, S. et al. "GaSb and InP-based VCSELs at 2.3 mu m emission wavelength for tuneable diode laser spectroscopy of carbon monoxide." (1 2011).
  • Amann, M-C.; Arafin, S.; Vizbaras, K. "Single mode and tunable GaSb-based VCSELs for wavelengths above 2 mu m." (1 2011).
  • Vizbaras, K.; Bachmann, A.; Arafin, S.; Sailer, K. et al. "MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5-2.7 mu m." (5 2011).

2010

  • Harkonen, A.; Bachmann, A.; Arafin, S.; Haring, K. et al. "2.34 mu m electrically-pumped VECSEL with buried tunnel junction." in Conference on Semiconductor Lasers and Laser Dynamics IV. (1 2010).
  • Arafin, S.; Bachmann, A.; Vizbaras, K.; Gustavsson, J. et al. "Large-Area Single-Mode GaSb-based VCSELs using an Inverted Surface Relief." (1 2010).
  • Arafin, S.; Bachmann, A.; Vizbaras, K.; Amann, M-C. et al. "Large-aperture single-mode GaSb-based BTJ-VCSELs at 2.62 mu m." (1 2010).
  • Harkonen, A.; Bachmann, A.; Arafin, S.; Haring, K. et al. "2.34 mu m electrically-pumped VECSEL with buried tunnel junction." (1 2010).
  • Bachmann, A.; Arafin, S.; Kashani-Shirazi, K.; Amann, M-C. "Long wavelength electrically pumped GaSb-based Buried Tunnel Junction VCSELs." (1 2010).

2009

  • Kashani-Shirazi, K.; Bachmann, A.; Arafin, S.; Vizbaras, K. et al. "Ultra-low-threshold GaSb-based Laser Diodes at 2.65 mu m." in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009). (1 2009).
  • Arafin, S.; Bachmann, A.; Kashani-Shirazi, K.; Amann, M-C. et al. "Continuous-Wave Electrically-Pumped GaSb-based VCSELs at similar to 2.6 mu m Operating up to 50 degrees C." (1 2009).
  • Arafin, S.; Bachmann, A.; Kasham-Shirazi, K.; Amann, M-C. et al. "Continuous-Wave Single-Mode Electrically -Pumped GaSb-based VCSELs at 2.5 mu m." (1 2009).
  • Kashani-Shirazi, K.; Bachmann, A.; Arafin, S.; Vizbaras, K. et al. "Ultra-low-threshold GaSb-based Laser Diodes at 2.65 mu m." (1 2009).
  • Arafin, S.; Bachmann, A.; Kashani-Shirazi, K.; Priyabadini, S. et al. "Low-resistive sulphur-treated ohmic contacts to n-type InAsSb." (12 2009).