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Aaron Arehart

  • Research Associate Professor, Electrical & Computer Engr.
  • 205 Dreese Laboratories
    2015 Neil Ave
    Columbus, OH 43210
  • 614-285-5323

About

Education

PhD, The Ohio State University, 2009

Areas of interest

Characterization and identification of electrically-active defects in semiconductors. Recently, this has led to development of new techniques to characterize traps in gallium nitride-based high electron mobility transistors (HEMTs) to identify defects responsible for degradation and reliability problems in these devices. Beyond nitrides, his other research interests include characterization of defects in solar materials, nanowires, and 2D materials using conventional techniques and novel nanometer-scale techniques.

Office

282 Caldwell Laboratory

Honors

  • May, 2016

    Student Poster Award (Student: K. Galiano).

  • March, 2016

    Lumley Research Award.

  • July, 2015

    Best Student Paper Award (Student: Z. Zhang).

  • July, 2015

    Outstanding Student Paper Award (Student: Jin Chen).

  • September, 1999

    Two-Year Distinguished University Fellow.

Journal Articles

2017

  • Lee, C.H.; Krishnamoorthy, S.; Paul, P.K.; O'Hara, D.J. et al., 2017, "Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy." Applied Physics Letters 111, no. 20,
  • Farzana, E.; Zhang, Z.; Paul, P.K.; Arehart, A.R. et al., 2017, "Influence of metal choice on (010) β-Ga2O3 Schottky diode properties." Applied Physics Letters 110, no. 20,
  • Jackson, CM, Arehart, AR, Grassmana, TJ, McSkimming, B, Speck, JS, Ringel SA, 2017, "Impact of Surface Treatment on Interface States of ALD Al2O3/GaN Interfaces." ECS Journal of Surface Science and Technology 6, no. 8, P489-P494 - P489-P494.
  • Krishnamoorthy, S, Xia, Z, Joishi, C, Zhang, Y, McGlone, J, Johnson, J, Brenner, M, Arehart, AR, Hwang J, Lodha, S, Rajan, S, 2017, "Modulation-doped β−(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor." Applied Physics Letters 111, 023502 - 023502.
  • Karki, S.; Paul, P.K.; Rajan, G.; Ashrafee, T. et al., 2017, "In situ and ex situ investigations of KF postdeposition treatment effects on CIGS solar cells." IEEE Journal of Photovoltaics 7, no. 2, 665-669 - 665-669.

2016

  • Nguyen, X.S.; Goh, X.L.; Zhang, L.; Zhang, Z. et al., 2016, "Deep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si(111) substrate." Japanese Journal of Applied Physics 55, no. 6,
  • Sasikumar, A.; Arehart, A.R.; Cardwell, D.W.; Jackson, C.M. et al., 2016, "Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs." Microelectronics Reliability 56, 37-44 - 37-44.
  • Liu, X.; Jackson, C.M.; Wu, F.; Mazumder, B. et al., 2016, "Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition." Journal of Applied Physics 119, no. 1,
  • Zhang, Z.; Farzana, E.; Arehart, A.R.; Ringel, S.A., 2016, "Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy." Applied Physics Letters 108, no. 5,
  • Zhang, Z.; Cardwell, D.; Sasikumar, A.; Kyle, E.C.H. et al., 2016, "Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures." Journal of Applied Physics 119, no. 16,
  • Nguyen, X.S.; Hou, H.W.; De Mierry, P.; Vennegues, P. et al., 2016, "Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy." PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 253, no. 11, 2225-2229 - 2225-2229.
  • Chen, J.; Puzyrev, Y.S.; Zhang, E.X.; Fleetwood, D.M. et al., 2016, "High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs." IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 16, no. 3, 282-289 - 282-289.
  • Arehart, A.R.; Sasikumar, A.; Via, G.D.; Poling, B. et al., 2016, "Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN." Microelectronics Reliability 56, 45-48 - 45-48.

2015

  • Lee, E.W.; Lee, C.H.; Paul, P.K.; Ma, L. et al., 2015, "Layer-transferred MoS2/GaN PN diodes." APPLIED PHYSICS LETTERS 107, no. 10,
  • Zhang, Z.; Arehart, A.R.; Kyle, E.C.H.; Chen, J. et al., 2015, "Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy." Applied Physics Letters 106, no. 2,
  • J. Chen, Y. S. Puzyrev, R. Jiang, E. X. Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, A. R. Arehart, S. A. Ringel, P. Saunier, and C. Lee, 2015, "Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs." IEEE Transactions on Nuclear Science 62, 2423-2430 - 2423-2430.
  • Paul, P.K.; Cardwell, D.W.; Jackson, C.M.; Galiano, K. et al., 2015, "Direct nm-Scale Spatial Mapping of Traps in CIGS." IEEE JOURNAL OF PHOTOVOLTAICS 5, no. 5, 1482-1486 - 1482-1486.
  • Zhang,Z; Farzana,E; Sun,W,Y; Chen,J; Zhang,E,X; Fleetwood,D,M; Schrimpf,R,D; McSkimming,B; Kyle,E,CH; Speck,J,S; Arehart,A,R; Ringel,S,A, 2015, "Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN." JOURNAL OF APPLIED PHYSICS 118, no. 15, 155701 - 155701.
  • Nguyen, X.S.; Lin, K.; Fitzgerald, E.A.; Chua, S.J., 2015, "Correlation of a generation-recombination center with a deep level trap in GaN." Applied Physics Letters 106, no. 10,
  • Chen, J.; Puzyrev, Y.S.; Jiang, R.; Zhang, E.X. et al., 2015, "Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs." IEEE TRANSACTIONS ON NUCLEAR SCIENCE 62, no. 6, 2423-2430 - 2423-2430.
  • Sasikumar, A.; Arehart, A.R.; Via, G.D.; Winningham, B. et al., 2015, "Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps." MICROELECTRONICS RELIABILITY 55, no. 11, 2258-2262 - 2258-2262.
  • Zhang, Z.; Farzana, E.; Sun, W.Y.; Chen, J. et al., 2015, "Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN." JOURNAL OF APPLIED PHYSICS 118, no. 15,
  • A. Sasikumar, A. R. Arehart, G. D. Via, B. Winningham, B. Poling, E. Heller, and S. A. Ringel, 2015, "Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps." Microelec. Reliability 55, 2258 - 2258.

2014

  • Ma, L.; Nath, D.N.; Lee, E.W.; Lee, C.H. et al., 2014, "Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm(2) V-1 s(-1)." APPLIED PHYSICS LETTERS 105, no. 7,
  • Lee, E.W.; Ma, L.; Nath, D.N.; Lee, C.H. et al., 2014, "Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions." APPLIED PHYSICS LETTERS 105, no. 20,
  • Zhang, Z.; Jackson, C.M.; Arehart, A.R.; Mcskimming, B. et al., 2014, "Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy." JOURNAL OF ELECTRONIC MATERIALS 43, no. 4, 828-832 - 828-832.

2013

  • Cardwell, D.W.; Sasikumar, A.; Arehart, A.R.; Kaun, S.W. et al., 2013, "Spatially-resolved spectroscopic measurements of E-c-0.57 eV traps in AlGaN/GaN high electron mobility transistors." APPLIED PHYSICS LETTERS 102, no. 19,
  • Long, R.D.; Jackson, C.M.; Yang, J.; Hazeghi, A. et al., 2013, "Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen." Applied Physics Letters 103, no. 20,
  • Zhang, Z.; Arehart, A.R.; Cinkilic, E.; Chen, J. et al., 2013, "Impact of proton irradiation on deep level states in n-GaN." Applied Physics Letters 103, no. 4,
  • Jackson, C.M.; Arehart, A.R.; Cinkilic, E.; McSkimming, B. et al., 2013, "Interface trap characterization of atomic layer deposition Al 2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies." Journal of Applied Physics 113, no. 20,
  • Sasikumar, A.; Arehart, A.R.; Martin-Horcajo, S.; Romero, M.F. et al., 2013, "Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy." Applied Physics Letters 103, no. 3,
  • Arehart, A.R.; Sasikumar, A.; Rajan, S.; Via, G.D. et al., 2013, "Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors." SOLID-STATE ELECTRONICS 80, 19-22 - 19-22.

2012

  • Sasikumar,A; Arehart,A; Kolluri,S; Wong,M,H; Keller,S; DenBaars,S,P; Speck,J,S; Mishra,U,K; Ringel,S,A, 2012, "Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs." IEEE ELECTRON DEVICE LETTERS 33, no. 5, 658-660 - 658-660.
  • Zhang, Z.; Hurni, C.A.; Arehart, A.R.; Speck, J.S. et al., 2012, "Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy." Applied Physics Letters 101, no. 15,
  • Zhang,Z; Hurni,C,A; Arehart,A,R; Yang,J; Myers,R,C; Speck,J,S; Ringel,S,A, 2012, "Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy." APPLIED PHYSICS LETTERS 100, no. 5, 052114 - 052114.
  • Gur,Emre; Tabares,G; Arehart,A; Chauveau,J,M; Hierro,A; Ringel,S,A, 2012, "Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy." JOURNAL OF APPLIED PHYSICS 112, no. 12, 123709 - 123709.
  • Cardwell, D.W.; Arehart, A.R.; Poblenz, C.; Pei, Y. et al., 2012, "Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor." APPLIED PHYSICS LETTERS 100, no. 19,
  • Gur,Emre; Tabares,G; Arehart,A; Chauveau,J,M; Hierro,A; Ringel,S,A, 2012, "Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy." JOURNAL OF APPLIED PHYSICS 112, no. 12, 123709 - 123709.

2011

  • Arehart, A.R.; Allerman, A.A.; Ringel, S.A., 2011, "Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes." Journal of Applied Physics 109, no. 11,

2010

  • Arehart, A.R.; Homan, T.; Wong, M.H.; Poblenz, C. et al., 2010, "Impact of N- and Ga-face polarity on the incorporation of deep levels in n -type GaN grown by molecular beam epitaxy." Applied Physics Letters 96, no. 24,
  • Arehart, A.R.; Poblenz, C.; Speck, J.S.; Ringel, S.A., 2010, "Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy." Journal of Applied Physics 107, no. 5,

2009

  • Yang, C-K.; Roblin, P.; Malonis, A.; Arehart, A. et al., 2009, "Characterization of Traps in AlGaN/GaN HEMTs with a Combined Large Signal Network Analyzer/Deep Level Optical Spectrometer System." 2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3 1209-+ - 1209-+.

2008

  • Lin, Y.; Arehart, A.R.; Carlin, A.M.; Ringel, S.A., 2008, "Separation of bulk and surface electron transport in metamorphic InAs layers using quantitative mobility spectrum analysis." Applied Physics Letters 93, no. 6,
  • Arehart, A.R.; Corrion, A.; Poblenz, C.; Speck, J.S. et al., 2008, "Deep level optical and thermal spectroscopy of traps in n -GaN grown by ammonia molecular beam epitaxy." Applied Physics Letters 93, no. 11,

2007

  • Lin, Y.; Carlin, J.A.; Arehart, A.R.; Carlin, A.M. et al., 2007, "High-mobility two-dimensional electron gas in InAlAs/InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy." Applied Physics Letters 90, no. 1,

2006

  • Arehart, A.R.; Moran, B.; Speck, J.S.; Mishra, U.K. et al., 2006, "Effect of threading dislocation density on Ni/n-GaN Schottky diode I-V characteristics." JOURNAL OF APPLIED PHYSICS 100, no. 2,

2005

  • Armstrong, A.; Arehart, A.R.; Ringel, S.A., 2005, "A method to determine deep level profiles in highly compensated, wide band gap semiconductors." JOURNAL OF APPLIED PHYSICS 97, no. 8,
  • Armstrong,A; Arehart,A,R; Ringel,S,A, 2005, "A method to determine deep level profiles in highly compensated, wide band gap semiconductors." JOURNAL OF APPLIED PHYSICS 97, no. 8, 083529 - 083529.
  • Armstrong, A.; Arehart, A.R.; Green, D.; Mishra, U.K. et al., 2005, "Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon." JOURNAL OF APPLIED PHYSICS 98, no. 5,
  • Armstrong,A; Arehart,A,R; Green,D; Mishra,U,K; Speck,J,S; Ringel,S,A, 2005, "Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon." JOURNAL OF APPLIED PHYSICS 98, no. 5, 053704 - 053704.

2004

  • Armstrong, A.; Arehart, A.R.; Moran, B.; DenBaars, S.P. et al., 2004, "Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition." APPLIED PHYSICS LETTERS 84, no. 3, 374-376 - 374-376.

2002

  • Hierro, A.; Arehart, A.R.; Heying, B.; Hansen, M. et al., 2002, "Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy." Applied Physics Letters 80, no. 5, 805-807 - 805-807.

2001

  • Hierro, A.; Arehart, A.R.; Heying, B.; Hansen, M. et al., 2001, "Capture kinetics of electron traps in MBE-grown n-GaN." Physica Status Solidi (B) Basic Research 228, no. 1, 309-313 - 309-313.
  • Kaplar, R.J.; Arehart, A.R.; Ringel, S.A.; Allerman, A.A. et al., 2001, "Deep levels and their impact on generation current in Sn-doped InGaAsN." Journal of Applied Physics 90, no. 7, 3405-3408 - 3405-3408.

Papers in Proceedings

2017

  • Sun, W.; Ringel, S.A.; Arehart, A.R. "EC-0.90 eV trap-induced threshold voltage instability in GaN/Si MISHEMTs." (1 2017).
  • Paul, PK, Jarmar, T, Stolt, L, Rockett, A, Arehart, AR "Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells." in Photovoltaics Specialists Conference. (11 2017).
  • Paul, PK, Bailey, Zapalac, JG, Arehart AR "Fast C-V method to mitigate effects of deep levels in CIGS doping profiles." in Photovoltaics Specialists Conference. (11 2017).
  • Paul, P.K.; Jarmar, T.; Stolt, L.; Rockett, A. et al. "Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells." (12 2017).

2016

  • Sun, W.; Lee, C.; Saunier, P.; Ringel, S.A. et al. "Investigation of trapping effects on AlGaN/GaN HEMT under DC accelerated life testing." in IEEE International Reliability Physics Symposium (IRPS). (1 2016).
  • D. J. Chmielewski, K. Galiano, P. Paul, D. Cardwell, S. Carnevale, J. A. Carlin, A. R. Arehart, T. J. Grassman, S. A. Ringel "Comparative study of 2.05 eV AlGaInP and metamorphic GaInP materials and solar cells grown by MBE and MOCVD." in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). (6 2016).
  • Paul, P.K.; Aryal, K.; Marsillac, S.; Grassman, T.J. et al. "Identifying the source of reduced performance in 1-stage-grown Cu(In,Ga)Se-2 solar cells." (1 2016).
  • Paul, P.K.; Aryal, K.; Marsillac, S.; Ringel, S.A. et al. "Impact of the Ga/In ratio on defects in Cu(In,Ga)Se-2." (1 2016).
  • Sun, W.; Lee, C.; Saunier, P.; Ringel, S.A. et al. "Investigation of trapping effects on AlGaN/GaN HEMT under DC accelerated life testing." (1 2016).
  • Paul, P.K.; Aryal, K.; Marsillac, S.; Grassman, T.J. et al. "Identifying the source of reduced performance in 1-stage-grown Cu(In, Ga)Se2 solar cells." (11 2016).
  • Chmielewski, D.J.; Galiano, K.; Paul, P.; Cardwell, D. et al. "Comparative study of 2.05 eV AlGaInP and metamorphic GaInP materials and solar cells grown by MBE and MOCVD." (11 2016).
  • Paul, P.K.; Aryal, K.; Marsillac, S.; Ringel, S.A. et al. "Impact of the Ga/In ratio on defects in Cu(In, Ga)Se2." (11 2016).
  • Sun, W.; Lee, C.; Saunier, P.; Ringel, S.A. et al. "Investigation of trapping effects on AlGaN/GaN HEMT under DC accelerated life testing." (9 2016).
  • P. K. Paul*, K. Aryal, S. Marsillac, S. A. Ringel and A. R. Arehart "Impact of the Ga/In ratio on defects in Cu(In, Ga)Se2." in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). (6 2016).
  • P. K. Paul, K. Aryal, S. Marsillac, T. J. Grassman, S. A. Ringel and A. R. Arehart "Identifying the source of reduced performance in 1-stage-grown Cu(In, Ga)Se2 solar cells." in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). (6 2016).
  • W. Sun, C. Lee, P. Saunier, S. A. Ringel and A. R. Arehart "Investigation of trapping effects on AlGaN/GaN HEMT under DC accelerated life testing." in 2016 IEEE International Reliability Physics Symposium (IRPS). (4 2016).
  • Chmielewski, D.J.; Galiano, K.; Paul, P.; Cardwell, D. et al. "Comparative Study of 2.05 eV AlGaInP and Metamorphic GaInP Materials and Solar Cells Grown by MBE and MOCVD." (1 2016).
  • Chmielewski, D.J.; Galiano, K.; Paul, P.; Cardwell, D. et al. "Comparative Study of 2.05 eV AlGaInP and Metamorphic GaInP Materials and Solar Cells Grown by MBE and MOCVD." in 43rd IEEE Photovoltaic Specialists Conference (PVSC). (1 2016).
  • Paul, P.K.; Aryal, K.; Marsillac, S.; Ringel, S.A. et al. "Impact of the Ga/In ratio on defects in Cu(In,Ga)Se-2." in 43rd IEEE Photovoltaic Specialists Conference (PVSC). (1 2016).
  • P. K. Paul, D. W. Cardwell, C. M. Jackson, K. Galiano, K. Aryal, J. P. Pelz, S. Marsillac, S. A. Ringel, T. J. Grassman and A. R. Arehart Direct nm-scale spatial mapping of traps in CIGS. in 42nd IEEE Photovoltaic Specialist Conference. http://dx.doi.org/10.1109/pvsc.2015.7355656, (1 2016).
  • Paul, P.K.; Aryal, K.; Marsillac, S.; Grassman, T.J. et al. "Identifying the source of reduced performance in 1-stage-grown Cu(In,Ga)Se-2 solar cells." in 43rd IEEE Photovoltaic Specialists Conference (PVSC). (1 2016).

2015

  • Cardwell, D.W.; Vaughn, N.; Paul, P.; Ratcliff, C. et al. "Investigations of Metamorphic (Al)GaInP for III-V Multijunction Photovoltaics." (1 2015).
  • Cardwell,Drew,W; Vaughn,Nathan; Paul,Pran; Ratcliff,Chris; Chmielewski,Dan; Carnevale,Santino; Arehart,Aaron; Grassman,Tyler,J; Ringel,Steven,A Investigations of Metamorphic (Al)GaInP for III-V Multijunction Photovoltaics. in IEEE 42nd Photovoltaic Specialist Conference (PVSC). http://dx.doi.org/10.1109/pvsc.2015.7356437, (1 2015).
  • Sasikumar, A.; Zhang, Z.; Kumar, P.; Zhang, E.X. et al. "Proton irradiation-induced traps causing V-T instabilities and RF degradation in GaN HEMTs." in IEEE International Reliability Physics Symposium (IRPS). (1 2015).
  • Paul, P.K.; Cardwell, D.W.; Jackson, C.M.; Galiano, K. et al. "Direct nm-scale spatial mapping of traps in CIGS." (12 2015).
  • Cardwell, D.W.; Vaughn, N.; Paul, P.; Ratcliff, C. et al. "Investigations of Metamorphic (Al)GaInP for III-V Multijunction Photovoltaics." in IEEE 42nd Photovoltaic Specialist Conference (PVSC). (1 2015).
  • Paul, P.K.; Cardwell, D.W.; Jackson, C.M.; Galiano, K. et al. "Direct nm-scale spatial mapping of traps in CIGS." (1 2015).
  • D. W. Cardwell, N. Vaughn, P. Paul, C. Ratcliff, D. Chmielewski, S. Carnevale, A. R. Arehart, T. J. Grassman, and S. A. Ringel "Investigations of metamorphic (Al)GaInP for III-V multijunction photovoltaics." in 42nd IEEE Photovoltaics Specialists Conference. (10 2015).
  • A. Sasikumar, Z. Zhang, P. Kumar, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, P. Saunier, C. Lee, S. A. Ringel, and A. R. Arehart "Comparison of Irradiation and Electrical Stressors on AlGaN/GaN HEMT Reliability." in Government Microcircuit Applications and Critical Technology Conference. (3 2015).
  • Paul, P.K.; Cardwell, D.W.; Jackson, C.M.; Galiano, K. et al. "Direct nm-scale spatial mapping of traps in CIGS." in IEEE 42nd Photovoltaic Specialist Conference (PVSC). (1 2015).
  • Cardwell, D.W.; Vaughn, N.; Paul, P.; Ratcliff, C. et al. "Investigations of metamorphic (Al)GaInP for III-V multijunction photovoltaics." (12 2015).
  • A. R. Arehart, W. Sun, A. Sasikumar and S. A. Ringel "Ec-2.0eV trap related GaN/Si MISHEMTs dynamic Ron degradation." in CS ManTech. (4 2015).
  • Sasikumar, A.; Zhang, Z.; Kumar, P.; Zhang, E.X. et al. "Proton irradiation-induced traps causing V<inf>T</inf> instabilities and RF degradation in GaN HEMTs." (1 2015).
  • Sasikumar, A.; Zhang, Z.; Kumar, P.; Zhang, E.X. et al. "Proton irradiation-induced traps causing V-T instabilities and RF degradation in GaN HEMTs." (1 2015).

2014

  • Sasikumar,A; Arehart,A,R; Kaun,S,W; Chen,J; Zhang,E,X; Fleetwood,D,M; Schrimpf,R,D; Speck,J,S; Ringel,S,A "Defects in GaN based transistors." in Conference on Gallium Nitride Materials and Devices IX. (1 2014).
  • J. S. Speck, Z. Zhang, A. R. Arehart, E. Cinkilic, J. Chen, E. X. Zhang, Y. S. Puzyrev, C. X. Zhang, M. W. McCurdy, S. T. Pantelides, B. McSkimming, S. W. Kaun, E. C. H. Kyle, D. M. Fleetwood, R. D. Schrimpf, S. A. Ringel "Proton Irradiation in Bulk GaN Layers and Nitride-based HEMT Devices." in Government Microcircuit Applications and Critical Technology Conference. (3 2014).
  • Sasikumar, A.; Arehart, A.R.; Kaun, S.W.; Chen, J. et al. "Defects in GaN based transistors." in Conference on Gallium Nitride Materials and Devices IX. (1 2014).
  • Sasikumar, A.; Arehart, A.R.; Kaun, S.W.; Chen, J. et al. "Defects in GaN based transistors." (1 2014).
  • Sasikumar, A.; Cardwell, D.W.; Arehart, A.R.; Lu, J. et al. "Toward a physical understanding of the reliability-limiting E C-0.57 eV trap in GaN HEMTs." (1 2014).
  • Sasikumar,A; Cardwell,D,W; Arehart,A,R; Lu,J; Kaun,S,W; Keller,S; Mishra,U,K; Speck,J,S; Pelz,J,P; Ringel,S,A "Toward a physical understanding of the reliability-limiting E-C-0.57 eV trap in GaN HEMTs." in International Reliability Physics Symposium (IRPS). (1 2014).
  • Sasikumar, A.; Cardwell, D.W.; Arehart, A.R.; Lu, J. et al. "Toward a physical understanding of the reliability-limiting E-C-0.57 eV trap in GaN HEMTs." (1 2014).
  • Sasikumar, A.; Cardwell, D.W.; Arehart, A.R.; Lu, J. et al. "Toward a physical understanding of the reliability-limiting E-C-0.57 eV trap in GaN HEMTs." in International Reliability Physics Symposium (IRPS). (1 2014).
  • Sasikumar, A.; Arehart, A.R.; Kaun, S.W.; Chen, J. et al. "Defects in GaN based transistors." (1 2014).

2012

  • Sasikumar,A; Arehart,A; Ringel,S,A; Kaun,S; Wong,M,H; Mishra,U,K; Speck,J,S "Direct Correlation Between Specific Trap Formation and Electric Stress-induced Degradation in MBE-grown AlGaN/GaN HEMTs." in IEEE International Reliability Physics Symposium (IRPS). (1 2012).
  • Sasikumar, A.; Arehart, A.; Ringel, S.A.; Kaun, S. et al. "Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs." (9 2012).
  • Sasikumar, A.; Arehart, A.; Ringel, S.A.; Kaun, S. et al. "Direct Correlation Between Specific Trap Formation and Electric Stress-induced Degradation in MBE-grown AlGaN/GaN HEMTs." in IEEE International Reliability Physics Symposium (IRPS). (1 2012).
  • Sasikumar, A.; Arehart, A.; Ringel, S.A.; Kaun, S. et al. "Direct Correlation Between Specific Trap Formation and Electric Stress-induced Degradation in MBE-grown AlGaN/GaN HEMTs." (1 2012).

2011

  • Arehart,A,R; Malonis,A,C; Poblenz,C; Pei,Y; Speck,J,S; Mishra,U,K; Ringel,S,A "Next generation defect characterization in nitride HEMTs." in International Workshop on Nitride Semiconductors (IWN)/Fall Meeting of the European-Materials-Research-Society (E-MRS)/Symposium N/Symposium H. (1 2011).
  • Arehart, A.R.; Malonis, A.C.; Poblenz, C.; Pei, Y. et al. "Next generation defect characterization in nitride HEMTs." (1 2011).
  • Arehart, A.R.; Malonis, A.C.; Poblenz, C.; Pei, Y. et al. "Next generation defect characterization in nitride HEMTs." in International Workshop on Nitride Semiconductors (IWN)/Fall Meeting of the European-Materials-Research-Society (E-MRS)/Symposium N/Symposium H. (1 2011).
  • Arehart, A.R.; Malonis, A.C.; Poblenz, C.; Pei, Y. et al. "Next generation defect characterization in nitride HEMTs." (7 2011).

2010

  • Arehart, A.R.; Sasikumar, A.; Via, G.D.; Winningham, B. et al. "Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs." (1 2010).
  • Arehart, A.R.; Sasikumar, A.; Via, G.D.; Winningham, B. et al. "Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs." (12 2010).
  • Arehart, A.R.; Brenner, M.R.; Zhang, Z.; Swaminathan, K. et al. "Traps in AlGaInP materials and devices lattice matched to GaAs for multi-junction solar cells." (12 2010).
  • Arehart, A.R.; Sasikumar, A.; Via, G.D.; Winningham, B. et al. "Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs." in International Electron Devices Meeting (IEDM). (1 2010).
  • Arehart, A.R.; Brenner, M.R.; Zhang, Z.; Swaminathan, K. et al. "TRAPS IN AlGaInP MATERIALS AND DEVICES LATTICE MATCHED TO GaAs FOR MULTI-JUNCTION SOLAR CELLS." in 35th IEEE Photovoltaic Specialists Conference. (1 2010).
  • Arehart,A,R; Brenner,M,R; Zhang,Z; Swaminathan,K; Ringel,S,A "TRAPS IN AlGaInP MATERIALS AND DEVICES LATTICE MATCHED TO GaAs FOR MULTI-JUNCTION SOLAR CELLS." in 35th IEEE Photovoltaic Specialists Conference. (1 2010).
  • Arehart,A,R; Sasikumar,A; Via,G,D; Winningham,B; Poling,B; Heller,E; Ringel,S,A "Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs." in International Electron Devices Meeting (IEDM). (1 2010).
  • Arehart, A.R.; Brenner, M.R.; Zhang, Z.; Swaminathan, K. et al. "TRAPS IN AlGaInP MATERIALS AND DEVICES LATTICE MATCHED TO GaAs FOR MULTI-JUNCTION SOLAR CELLS." (1 2010).

2009

  • Suh, I.; Roblin, P.; Ko, Y.; Yang, C.K. et al. "Additive phase noise measurements of AlGaN/GaN HEMTs using a large signal network analyzer and a tunable monochromatic light source." (12 2009).
  • Yang,Chieh-Kai; Roblin,Patrick; Malonis,Andrew; Arehart,Aaron; Ringel,Steven; Poblenz,Christiane; Pei,Yi; Speck,James; Mishra,Umesh "Characterization of Traps in AlGaN/GaN HEMTs with a Combined Large Signal Network Analyzer/Deep Level Optical Spectrometer System." in IEEE/MTT-S International Microwave Symposium. (1 2009).

2008

  • Arehart, A.R.; Corrion, A.; Poblenz, C.; Speck, J.S. et al. "Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films." in 7th International Conference on Nitride Semiconductors (ICNS-7). (1 2008).
  • Arehart, A.R.; Corrion, A.; Poblenz, C.; Speck, J.S. et al. "Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films." (12 2008).
  • Arehart, A.R.; Corrion, A.; Poblenz, C.; Speck, J.S. et al. "Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films." (1 2008).
  • Arehart,A,R; Corrion,A; Poblenz,C; Speck,J,S; Mishra,U,K; DenBaars,S,P; Ringel,S,A "Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films." in 7th International Conference on Nitride Semiconductors (ICNS-7). (1 2008).

2005

  • Armstrong,A; Green,D; Arehart,A,R; Mishra,U,K; Speck,J,S; Ringel,S,A "Carbon-related deep states in compensated n-type and semi-insulating GaN : C and their influence on yellow luminescence." in Symposium on GaN, AIN, InN and Their Alloys held at the 2004 MRS Fall Meeting. (1 2005).
  • Armstrong, A.; Green, D.; Arehart, A.R.; Mishra, U.K. et al. "Carbon-related deep states in compensated n-type and semi-insulating GaN:C and their influence on yellow luminescence." (8 2005).
  • Armstrong, A.; Green, D.; Arehart, A.R.; Mishra, U.K. et al. "Carbon-related deep states in compensated n-type and semi-insulating GaN : C and their influence on yellow luminescence." (1 2005).
  • Armstrong,A; Arehart,A; Green,D; Speck,J,S; Mishra,U,K; Ringel,S,A "A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si." in International Workshop on Nitrides Semiconductors (IWN 2004). (1 2005).
  • Armstrong, A.; Arehart, A.; Green, D.; Speck, J.S. et al. "A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si." (11 2005).
  • Armstrong, A.; Arehart, A.; Green, D.; Speck, J.S. et al. "A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si." (1 2005).
  • Armstrong, A.; Green, D.; Arehart, A.R.; Mishra, U.K. et al. "Carbon-related deep states in compensated n-type and semi-insulating GaN : C and their influence on yellow luminescence." in Symposium on GaN, AIN, InN and Their Alloys held at the 2004 MRS Fall Meeting. (1 2005).
  • Armstrong, A.; Arehart, A.; Green, D.; Speck, J.S. et al. "A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si." in International Workshop on Nitrides Semiconductors (IWN 2004). (1 2005).

2004

  • Armstrong,A; Arehart,A,R; Moran,B; DenBaars,S,P; Mishra,U,K; Speck,J,S; Ringel,S,A "Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition." in 30th International Symposium on Compound Semiconductors. (1 2004).
  • Armstrong, A.; Arehart, A.R.; Moran, B.; DenBaars, S.P. et al. "Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition." in 30th International Symposium on Compound Semiconductors. (1 2004).
  • Armstrong, A.; Arehart, A.R.; Moran, B.; DenBaars, S.P. et al. "Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition." (1 2004).

2003

  • Arehart,A,R; Poblenz,C; Heying,B; Speck,J,S; Mishra,U,K; DenBaars,S,P; Ringel,S,A "Influence of growth parameters on the deep level spectrum in MBE-grown n-GaN." in Symposium on GaN and Related Alloys held at the MRS Fall Meeting. (1 2003).
  • Armstrong,A; Arehart,A,R; Ringel,S,A; Moran,B; DenBaars,S,P; Mishra,U,K; Speck,J,S "Identification of carbon-related bandgap states in GaN grown by MOCVD." in Symposium on GaN and Related Alloys held at the MRS Fall Meeting. (1 2003).
  • Arehart, A.R.; Poblenz, C.; Heying, B.; Speck, J.S. et al. "Influence of growth parameters on the deep level spectrum in MBE-grown n-GaN." (12 2003).
  • Ringel, S.A.; Armstrong, A.; Arehart, A.; Moran, B. et al. "Detection of carbon-related bandgap states in GaN using deep level optical spectroscopy." (1 2003).
  • Armstrong, A.; Arehart, A.R.; Ringel, S.A.; Moran, B. et al. "Identification of carbon-related bandgap states in GaN grown by MOCVD." (12 2003).
  • Armstrong, A.; Arehart, A.R.; Moran, B.; DenBaars, S.P. et al. "Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition." (1 2003).
  • Armstrong, A.; Arehart, A.R.; Ringel, S.A.; Moran, B. et al. "Identification of carbon-related bandgap states in GaN grown by MOCVD." (1 2003).
  • Armstrong, A.; Arehart, A.R.; Ringel, S.A.; Moran, B. et al. "Identification of carbon-related bandgap states in GaN grown by MOCVD." in Symposium on GaN and Related Alloys held at the MRS Fall Meeting. (1 2003).
  • Arehart, A.R.; Poblenz, C.; Heying, B.; Speck, J.S. et al. "Influence of growth parameters on the deep level spectrum in MBE-grown n-GaN." (1 2003).
  • Arehart, A.R.; Poblenz, C.; Heying, B.; Speck, J.S. et al. "Influence of growth parameters on the deep level spectrum in MBE-grown n-GaN." in Symposium on GaN and Related Alloys held at the MRS Fall Meeting. (1 2003).

Unknown

  • Paul, P.K.; Bailey, J.; Zapalac, G.; Arehart, A.R. "Fast C-V method to mitigate effects of deep levels in CIGS doping profiles."
  • Paul, P.K.; Jarmar, T.; Stolt, L.; Rockett, A. et al. "Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells."